Sapphire Wafer Direct Bonding Method Thiab Txheej Txheem Rau Sapphire Pressure-sensitive Structure

1. Tam sim no invention belongs rau lub technical teb ntawm mems technology, tshwj xeeb tshaj yog rau ib txoj kev rau kev sib txuas ncaj qha ntawm sapphire wafers ntawm sapphire siab-rhiab qauv.

Cov txheej txheem hauv qab:

2. Kev khiav hauj lwm kub ntawm cov tsoos semiconductor siab sensors feem ntau qis dua 600 degree. Qhov siab tshaj plaws kev khiav hauj lwm kub ntawm lub sic piezoresistive siab sensor yog 600 degree, lub siab tshaj plaws kev khiav hauj lwm kub ntawm lub soi siab sensor yog qis dua 500 degree, thiab lub siab tshaj plaws kev khiav hauj lwm kub ntawm silicon-sapphire siab sensor. Kub kub 350 degree. Hluav taws xob siab sensors tsis yooj yim rau siv nyob rau hauv qhov kub thiab txias ib puag ncig.

3. Tam sim no, fiber ntau optic siab sensor khoom raws li sapphire chips tau tshwm sim txawv teb chaws, xws li yoj-phire dpt950 fiber optic siab sensor ntawm British oxsensis tuam txhab, qhov siab tshaj plaws ua hauj lwm kub tuaj yeem ncav cuag 600 degree, thiab kev sojntsuam pem hauv ntej kawg tuaj yeem ncav cuag. 1000 degree. Txawm li cas los xij, cov txiaj ntsig kev tshawb fawb ntawm optical fiber ntau sensors raws li sapphire chips tsis tau tshaj tawm hauv Suav teb. Suav patent ntaub ntawv cn103234673 nthuav tawm lub siab kub-resistant siab sensor micro-nano qauv, uas muaj xws li: silicon carbide diaphragm, ib tug reflective zaj duab xis, ib tug semi-reflective zaj duab xis, ib tug bonding txheej, silicon carbide substrate, txheej encapsulation thiab sapphire optical fiber ntau; Cov zaj duab xis reflective yog coated nyob rau hauv nruab nrab ntawm silicon carbide diaphragm, semi-reflective zaj duab xis yog coated nyob rau hauv lub kawg ntawm lub sapphire fiber, lub bonding txheej (silicon dioxide) nyob nruab nrab ntawm silicon carbide diaphragm thiab silicon carbide substrate, thiab sapphire fiber ntau txuas nrog silicon carbide substrate los ntawm txheej txheej encapsulation (siab kub ceramic kua nplaum). Cov txheej txheem kev npaj ntawm lub siab sensor saum toj no yog tsim los ntawm Fabry-Parot cuam tshuam kab noj hniav los ntawm kev siv cov yeeb yaj kiab uas muaj kev cuam tshuam rau ntawm silicon carbide diaphragm thiab semi-reflective zaj duab xis plated ntawm qhov kawg ntawm sapphire optical fiber kom paub txog kev ntsuas siab hauv siab. kub ib puag ncig.

4. Tam sim no, domestic sapphire wafer (wafer-level) cov txheej txheem kev sib txuas ncaj qha tseem nyob rau theem kev tshawb fawb theoretical, thiab tsis muaj qhov paub tab sapphire wafer (wafer-level) cov txheej txheem kev sib txuas ncaj qha tsis tau. Nyob rau hauv Suav teb, wafer-level bonding feem ntau yog tsom rau cov khoom siv silicon, thiab cov khoom sib txuas yog qis dua 500 degree, xws li silicon-silicon bonding, silicon-iav anodic bonding, thiab lwm yam. Suav patent daim ntawv cn 105236350 qhia txog kev sib txuas ncaj qha. txoj kev rau sapphire siab-rhiab chips, tsuas yog qhov kub thiab txias yog 1350 degree, tsis muaj siab (siab) tswj thaum lub sij hawm sib txuas txheej txheem, thiab tsis muaj coupling tswj ntawm kub thiab siab.

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